The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Dec. 30, 2008
Applicants:
Fabio Pellizzer, Cornate d'Adda, IT;
Michele Magistretti, Gessate, IT;
Cristina Casellato, Sulbiate, IT;
Monica Vigilante, Cavenago Brianza, IT;
Inventors:
Fabio Pellizzer, Cornate d'Adda, IT;
Michele Magistretti, Gessate, IT;
Cristina Casellato, Sulbiate, IT;
Monica Vigilante, Cavenago Brianza, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2445 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/141 (2013.01); H01L 45/144 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01);
Abstract
A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer () on a metal layer () above a substrate. A phase-change material layer () is formed on the dielectric layer. A contact region () is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.