The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Nov. 28, 2012
Industrial Technology Research Institute, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
Provided is an enhancement mode GaN-based transistor device including an epitaxial stacked layer disposed on a substrate; a source layer and a drain layer disposed on a surface of the epitaxial stacked layer; a p-type metal oxide layer disposed between the source layer and the drain layer; and a gate layer disposed on the p-type metal oxide layer. Besides, the p-type metal oxide layer includes a body part disposed on the surface of the epitaxial stacked layer, and a plurality of extension parts connecting the body part and extending into the epitaxial stacked layer. With such structure, the enhancement mode GaN-based transistor device can effectively suppress generation of the gate leakage current.