The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
May. 17, 2011
Sung-min Hwang, Seoul, KR;
Kyoung-hoon Kim, Yongin-si, KR;
Hansoo Kim, Suwon-si, KR;
Jae-joo Shim, Suwon-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Wonseok Cho, Suwon-si, KR;
Byoungkeun Son, Suwon-si, KR;
Hoosung Cho, Yongin-si, KR;
Sung-Min Hwang, Seoul, KR;
Kyoung-Hoon Kim, Yongin-si, KR;
Hansoo Kim, Suwon-si, KR;
Jae-Joo Shim, Suwon-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Wonseok Cho, Suwon-si, KR;
Byoungkeun Son, Suwon-si, KR;
Hoosung Cho, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate doped with a first conductive type dopant, a plurality of stacked structures arranged side by side on the substrate and extending in a first direction, each of the stacked structures including gate electrodes spaced apart from each other, the plurality of stacked structures including a pair of stacked structures spaced apart from each other at a first interval in a second direction perpendicular to the first direction, and a pick-up region extending in the first direction in the substrate between the pair of stacked structures and doped with the first conductive type dopant.