The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Jan. 18, 2007
Applicants:
Esin Kutlu Demirlioglu, Cupertino, CA (US);
Min-yih Luo, San Jose, CA (US);
Inventors:
Esin Kutlu Demirlioglu, Cupertino, CA (US);
Min-Yih Luo, San Jose, CA (US);
Assignee:
Vishay-Siliconix, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H02H 3/20 (2006.01); H02H 3/22 (2006.01); H01L 29/861 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
H01L 27/027 (2013.01); H01L 29/0626 (2013.01); H01L 29/861 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Systems and methods for floating gate structures with high electrostatic discharge performance. In one embodiment, a semiconductor structure includes a floating gate device. The floating gate device includes an embedded diode characterized as having less temperature dependence than a Zener diode. The breakdown voltage of the embedded diode is greater than an operating voltage of an associated integrated circuit and a snapback trigger voltage of the embedded diode is lower than a breakdown voltage of the semiconductor structure.