The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Sep. 25, 2013
Hitachi Kokusai Electric Inc., Tokyo, JP;
Daigo Yamaguchi, Toyama, JP;
Tsuyoshi Takeda, Toyama, JP;
Taketoshi Sato, Toyama, JP;
Hidenari Yoshida, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes forming thin films on substrates by performing a cycle a predetermined number of times. The cycle includes: supplying a process gas into a process container and confining the gas in the container including an outer reaction tube and an inner reaction tube having a flat top inner surface at an upper end portion covering a portion of a top surface of the support arranging and supporting the substrates and including a communication section connecting an inside of the inner reaction tube to an inside of the outer reaction tube, wherein the communication section is disposed at a region other than a region horizontally encompassing a substrate arrangement region; maintaining a state where the gas is confined in the container; and exhausting the gas from the container via the communication section and a space between the inner and outer reaction tubes.