The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Jan. 24, 2012
Applicants:

John Patrick Holland, San Jose, CA (US);

Peter L. G. Ventzek, San Francisco, CA (US);

Harmeet Singh, Eindhoven, NL;

Jun Shinagawa, San Jose, CA (US);

Akira Koshiishi, San Jose, CA (US);

Inventors:

John Patrick Holland, San Jose, CA (US);

Peter L. G. Ventzek, San Francisco, CA (US);

Harmeet Singh, Eindhoven, NL;

Jun Shinagawa, San Jose, CA (US);

Akira Koshiishi, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/077 (2006.01); H01J 37/065 (2006.01); H01J 37/32 (2006.01); H01J 37/16 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32357 (2013.01); H01J 37/32376 (2013.01); H01J 37/32596 (2013.01); H01J 37/32449 (2013.01);
Abstract

A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.


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