The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Oct. 16, 2012
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chang-Hyun Lee, Hwaseong-Si, KR;

Jung-Dal Choi, Hwaseong-Si, KR;

Do-Hyun Lee, Hwaseong-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/06 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/06 (2013.01); G11C 16/3418 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11565 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01);
Abstract

A semiconductor device includes a bit line, a first cell string and a second cell string. The first cell string includes a first selecting transistor connected to the bit line in series and having a threshold voltage greater than a first reference voltage, a second selecting transistor having a threshold voltage smaller than a second reference voltage, cell transistors and a ground selecting transistor. The second cell string includes a third selecting transistor connected to the bit line in series and having a threshold voltage smaller than the first reference voltage, a fourth selecting transistor having a threshold voltage greater than the second reference voltage, cell transistors and a ground selecting transistor. A channel region of the first selecting transistor has an enhancement mode and a first conductive type. A channel region of the third selecting transistor has a depletion mode and a second conductive type.


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