The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Mar. 07, 2013
Applicant:
Rambus Inc., Sunnyvale, CA (US);
Inventors:
Eric Linstadt, Palo Alto, CA (US);
Brent Steven Haukness, Monte Sereno, CA (US);
J. James Tringali, Los Altos, CA (US);
Assignee:
Rambus Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 7/02 (2006.01); G01R 31/28 (2006.01); G11C 13/00 (2006.01); G11C 29/38 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0035 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0011 (2013.01); G11C 29/38 (2013.01); G11C 29/50008 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0054 (2013.01); G11C 2029/5002 (2013.01); G11C 2213/79 (2013.01);
Abstract
Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining endurance of the second group of memory cells.