The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Oct. 23, 2012
Applicant:
Advanced Technology Materials, Inc., Danbury, CT (US);
Inventors:
William A. Wojtczak, Austin, TX (US);
Ma. Fatima Seijo, Hayward, CA (US);
David Bernhard, Kooskia, ID (US);
Long Nguyen, San Jose, CA (US);
Assignee:
ADVANCED TECHNOLOGY MATERIALS, INC., Danbury, CT (US);
Primary Examiner:
Int. Cl.
CPC ...
C11D 3/30 (2006.01); C09K 13/00 (2006.01); C09K 13/08 (2006.01); C11D 7/10 (2006.01); C11D 7/26 (2006.01); C11D 7/28 (2006.01); C11D 7/32 (2006.01); C11D 7/34 (2006.01); C11D 11/00 (2006.01); C23F 11/14 (2006.01); C23G 1/10 (2006.01); G03F 7/42 (2006.01); H01L 21/02 (2006.01); C11D 3/32 (2006.01); C11D 3/33 (2006.01);
U.S. Cl.
CPC ...
C11D 3/30 (2013.01); C09K 13/00 (2013.01); C09K 13/08 (2013.01); C11D 3/32 (2013.01); C11D 3/33 (2013.01); C11D 7/10 (2013.01); C11D 7/264 (2013.01); C11D 7/265 (2013.01); C11D 7/266 (2013.01); C11D 7/28 (2013.01); C11D 7/3209 (2013.01); C11D 7/3218 (2013.01); C11D 7/3245 (2013.01); C11D 7/3254 (2013.01); C11D 7/3263 (2013.01); C11D 7/3281 (2013.01); C11D 7/34 (2013.01); C11D 11/0047 (2013.01); C23F 11/142 (2013.01); C23F 11/146 (2013.01); C23G 1/103 (2013.01); C23G 1/106 (2013.01); G03F 7/425 (2013.01); H01L 21/02063 (2013.01); H01L 21/02071 (2013.01); H01L 21/02074 (2013.01);
Abstract
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.