The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Jun. 17, 2011
Ichiro Nakayama, Osaka, JP;
Hitoshi Yamanishi, Osaka, JP;
Yoshihisa Ohido, Osaka, JP;
Nobuyuki Kamikihara, Nara, JP;
Tomohiro Okumura, Osaka, JP;
Ichiro Nakayama, Osaka, JP;
Hitoshi Yamanishi, Osaka, JP;
Yoshihisa Ohido, Osaka, JP;
Nobuyuki Kamikihara, Nara, JP;
Tomohiro Okumura, Osaka, JP;
Abstract
Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.