The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
May. 08, 2012
Applicants:
Shinya Sasagawa, Chigasaki, JP;
Akihiro Ishizuka, Sagamihara, JP;
Takehisa Hatano, Atsugi, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 21/8252 (2006.01); H01L 21/8256 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8252 (2013.01); H01L 21/8256 (2013.01); H01L 27/0605 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78696 (2013.01);
Abstract
In a transistor including a wide band gap semiconductor layer as a semiconductor layer, a wide band gap semiconductor layer is separated into an island shape by an insulating layer with passivation properties for preventing atmospheric components from permeating. The edge portion of the island shape wide band gap semiconductor layer is in contact with the insulating film; thus, moisture or atmospheric components can be prevented from entering from the edge portion of the semiconductor layer to the wide band gap semiconductor layer.