The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
May. 22, 2014
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Mei-yee Shek, Palo Alto, CA (US);
Weifeng Ye, San Jose, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Kang Sub Yim, Palo Alto, CA (US);
Kelvin Chan, San Ramon, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7685 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/28562 (2013.01); H01L 21/76834 (2013.01); H01L 23/53238 (2013.01);
Abstract
Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.