The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
May. 29, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Rhett T. Brewer, Santa Clara, CA (US);
Durai V. Ramaswamy, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01); H01L 21/24 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66825 (2013.01); H01L 21/28273 (2013.01); H01L 21/44 (2013.01); H01L 27/11521 (2013.01); H01L 29/42332 (2013.01); H01L 29/511 (2013.01); H01L 29/66833 (2013.01); H01L 29/7881 (2013.01); H01L 21/244 (2013.01); H01L 21/265 (2013.01);
Abstract
Methods of forming memory cells including a charge storage structure having a gettering agent therein can be useful for non-volatile memory devices. Providing for gettering of oxygen from a charge-storage material of the charge storage structure can facilitate a mitigation of detrimental oxidation of the charge-storage material.
Quick Actions:
Brewer, Rhett. (2015). Gettering agents in memory charge storage structures (U.S. Patent No. 9105665). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9105665
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile