The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Jun. 29, 2012
Applicants:
Jiun-jie Huang, Kaohsiung, TW;
Ling-sung Wang, Tainan, TW;
Inventors:
Jiun-Jie Huang, Kaohsiung, TW;
Ling-Sung Wang, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5222 (2013.01); H01L 21/7682 (2013.01); H01L 23/5223 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 28/88 (2013.01); H01L 28/90 (2013.01); H01L 23/5227 (2013.01); H01L 28/10 (2013.01); H01L 28/20 (2013.01);
Abstract
A device includes a dielectric layer, a passive device including a portion in the dielectric layer, and a plurality of voids in the dielectric layer and encircling the passive device.
Huang, Jiun-Jie. (2015). Voids in interconnect structures and methods for forming the same (U.S. Patent No. 9105634). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9105634
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile