The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
May. 25, 2012
Wen-tai Chiang, Tainan, TW;
Chien-ting Lin, Hsinchu, TW;
Wen-Tai Chiang, Tainan, TW;
Chien-Ting Lin, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method for semiconductor device having metal gate includes providing a substrate having a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device having a first gate trench and the second semiconductor device having a second gate trench, forming a first work function metal layer and an etch stop layer in the first gate trench and the second gate trench, forming a metal layer having a material the same with the first work function metal layer in the second gate trench, and forming a filling metal layer in the first gate trench and the second gate trench to form a second work function metal layer in the first gate trench.