The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Aug. 12, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
F27D 11/00 (2006.01); H01L 21/31 (2006.01); H01L 21/44 (2006.01); H01L 21/324 (2006.01); F27B 17/00 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); F27B 17/0025 (2013.01); H01L 21/67109 (2013.01);
Abstract
A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers.