The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Aug. 10, 2011
Applicant:
Tong-yu Chen, Hsin-Chu, TW;
Inventor:
Tong-Yu Chen, Hsin-Chu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/3213 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/0337 (2013.01); H01L 21/76816 (2013.01); H01L 21/76838 (2013.01);
Abstract
A semiconductor structure is provided in the present invention. The semiconductor structure includes a substrate, a first material layer and a second material layer. A trench region is defined on the substrate. The trench region includes two separated first regions and a second region, wherein the second region is adjacent to and between the two first regions. The first material layer is disposed on the substrate outside the trench region. The second material layer is disposed in the second region and is level with the first material layer.