The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Jun. 20, 2012
Applicants:
Nicky LU, Taipei, TW;
Ming-hong Kuo, Hsinchu, TW;
Inventors:
Nicky Lu, Taipei, TW;
Ming-Hong Kuo, Hsinchu, TW;
Assignee:
Etron Technology, Inc., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10826 (2013.01); H01L 27/1085 (2013.01); H01L 27/10879 (2013.01); H01L 28/60 (2013.01); H01L 29/785 (2013.01);
Abstract
A dynamic memory structure includes a strip semiconductor material disposed on a substrate, a gate standing astride the strip semiconductor material and dividing the strip semiconductor material into a source terminal, a drain terminal and a channel region wherein a source width of the source terminal is larger than or equal to a channel width, a dielectric layer sandwiched between the gate and the strip semiconductor material, and a capacitor unit disposed on the substrate and including the source terminal serving as a lower electrode.