The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
May. 21, 2012
Ming-tsung Lee, Yilan County, TW;
Cheng-hua Yang, Hsinchu, TW;
Wen-fang Lee, Hsinchu, TW;
Chih-chung Wang, Hsinchu, TW;
Te-yuan Wu, Hsinchu, TW;
Ming-Tsung Lee, Yilan County, TW;
Cheng-Hua Yang, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
Te-Yuan Wu, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A layout pattern of a high voltage metal-oxide-semiconductor transistor device includes a first doped region having a first conductivity type, a second doped region having the first conductivity type, and an non-continuous doped region formed in between the first doped region and the second doped region. The non-continuous doped region further includes a plurality of third doped regions, a plurality of gaps, and a plurality of fourth doped regions. The gaps and the third doped regions s are alternately arranged, and the fourth doped regions are formed in the gaps. The third doped regions include a second conductivity type complementary to the first conductivity type, and the fourth doped regions include the first conductivity type.