The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Sep. 14, 2012
Zhen-yu LI, Chiayi County, TW;
Hon-way Lin, Hsinchu, TW;
Chung-pao Lin, New Taipei, TW;
Hsing-kuo Hsia, Hsin Chu County, TW;
Hao-chung Kuo, Hsin-Tsu County, TW;
Zhen-Yu Li, Chiayi County, TW;
Hon-Way Lin, Hsinchu, TW;
Chung-Pao Lin, New Taipei, TW;
Hsing-Kuo Hsia, Hsin Chu County, TW;
Hao-Chung Kuo, Hsin-Tsu County, TW;
TSMC Solid State Lighting Ltd., Hsinchu, TW;
Abstract
The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.