The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Jan. 18, 2012
Applicants:

Faris Modawar, Georgetown, TX (US);

Marcie R. Black, Lincoln, MA (US);

Brian Murphy, Revere, MA (US);

Jeff Miller, Brookline, MA (US);

Mike Jura, Boston, MA (US);

Inventors:

Faris Modawar, Georgetown, TX (US);

Marcie R. Black, Lincoln, MA (US);

Brian Murphy, Revere, MA (US);

Jeff Miller, Brookline, MA (US);

Mike Jura, Boston, MA (US);

Assignee:

BANDGAP ENGINEERING, INC., Woburn, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 31/0288 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035227 (2013.01); H01L 31/028 (2013.01); H01L 31/0288 (2013.01); H01L 31/1804 (2013.01); Y10S 977/762 (2013.01);
Abstract

In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.


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