The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jun. 24, 2013
Commissariat Á L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Cyrille Le Royer, Tullins-Fures, FR;
Costin Anghel, Vanves, FR;
Abstract
A TFET transistor includes an intrinsic channel, source and drain extension regions, source and drain conductive regions, a gate surmounting the channel and laid out such that an end of the channel is not covered by the gate. The transistor includes a first arrangement for forming an isolating space between the sides of the gate and the source conductive region including a first and a second dielectric spacer. The extension region has a thickness strictly greater than that of the channel such that the extension region has an increased thickness opposite the gate dielectric layer. The first face of the first spacer is in contact with the side of the gate followed by the side of the gate dielectric layer such that the first face covers the whole of the side of the layer.