The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Aug. 26, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Kazumichi Tsumura, Oita, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes a semiconductor substrate that includes a first region and a second region having a thickness that is less than a thickness of the first region, a first metal film having a same film thickness provided in each of a first through hole, and a second through hole, the first through hole penetrating the semiconductor substrate from the second surface to the first surface in the first region, and the second through hole penetrating the semiconductor substrate from the second surface to the first surface in the second region. A second metal film is formed on the first metal films and is provided inside the first through hole, and inside and outside of the second through hole. A thickness of the second metal film located outside the second through hole is greater than a thickness of the second metal film located outside the first through hole, and heights of upper surfaces of the second metal film in the first and second regions are the same.