The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Oct. 18, 2013
Keunnam Kim, Suwon-si, KR;
Sunyoung Park, Hwaseong-si, KR;
Kyehee Yeom, Suwon-si, KR;
Hyeon-woo Jang, Suwon-si, KR;
Jin-won Jeong, Seoul, KR;
Changhyun Cho, Yongin-si, KR;
Hyeongsun Hong, Seongnam-si, KR;
Keunnam Kim, Suwon-si, KR;
Sunyoung Park, Hwaseong-si, KR;
Kyehee Yeom, Suwon-si, KR;
Hyeon-Woo Jang, Suwon-si, KR;
Jin-Won Jeong, Seoul, KR;
Changhyun Cho, Yongin-si, KR;
HyeongSun Hong, Seongnam-si, KR;
Abstract
Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed on a sidewall of a bit line contact, wherein the etch stop pattern and the separate spacer each comprise material having an etch selectivity relative to an oxide. A storage node contact plug hole can be formed so that the etch stop pattern and the separate spacer form a portion of a sidewall of the storage node contact plug hole spaced apart from the bit line contact. The storage node contact plug hole can be cleaned to remove a natural oxide formed in the storage node contact plug hole. Related devices are also disclosed.