The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Jun. 17, 2013
Applicant:

Anpec Electronics Corporation, Hsin-Chu, TW;

Inventor:

Yung-Fa Lin, Hsinchu, TW;

Assignee:

Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 29/06 (2006.01); H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/22 (2013.01); H01L 21/265 (2013.01); H01L 29/105 (2013.01); H01L 29/66712 (2013.01);
Abstract

A substrate having thereon an epitaxial layer is provided. A hard mask having a first opening is formed on the epitaxial layer. A first trench is etched into the epitaxial layer through the first opening. The hard mask is trimmed to widen the first opening to a second opening. An upper corner portion of the first trench is revealed. A dopant layer is filled into the first trench. The dopants are driven into the epitaxial layer to form a doped region within the first trench. The doped region includes a first region adjacent to the surface of the first trench and a second region farther from the surface. The entire dopant layer is then etched and the epitaxial layer within the first region is also etched away to form a second trench.


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