The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Jan. 20, 2012
Applicants:

Patrice Besse, Tournefeuille, FR;

Philippe Givelin, Leguevin, FR;

Eric Rolland, Grepiac, FR;

Inventors:

Patrice Besse, Tournefeuille, FR;

Philippe Givelin, Leguevin, FR;

Eric Rolland, Grepiac, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 27/0255 (2013.01); H01L 27/0259 (2013.01); H01L 27/0647 (2013.01); H01L 29/7412 (2013.01); H01L 29/7428 (2013.01);
Abstract

An integrated circuit (IC) device including an electrostatic discharge (ESD) protection network for a high voltage application. The ESD protection network includes a common diode structure coupled between an external contact of the IC device and a substrate of the IC device, such that the common diode structure is forward biased towards the external contact, a Darlington transistor structure coupled between the external contact and the substrate of the IC device, and the Darlington transistor structure includes: an emitter node coupled to the external contact; a collector node coupled to the substrate; and a base node coupled between the emitter node of the Darlington transistor structure and the common diode structure. The at least one ESD protection network further comprises an isolation diode structure coupled between the emitter node and the base node of the Darlington transistor structure such that the isolation diode structure is forward biased towards the base node.


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