The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Dec. 02, 2013
Hgst Netherlands B.v., Amsterdam, NL;
Hongquan Jiang, San Jose, CA (US);
Quang Le, San Jose, CA (US);
Thao Pham, San Jose, CA (US);
David J. Seagle, Morgan Hill, CA (US);
Hicham M. Sougrati, Elk Grove, CA (US);
Petrus A. Van Der Heijden, Cupertino, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
A scissor type magnetic sensor having an improved back edge bias structure. The back edge bias structure extends beyond the sides of the sensor stack for improved bias moment and is formed on a flat topography that provide for improved magnetic biasing. The sensor is formed by a method that includes first defining a sensor width and then depositing a multi-layer insulation layer that includes a dielectric layer that is resistant to ion milling and the depositing a fill layer over the dielectric layer that is removable by ion milling. After the multi-layer insulation layer has been deposited the back edge (i.e. stripe height) of the sensor is formed by masking and ion milling. This ion milling removes portions of the non-magnetic, electrically insulating fill layer that extend beyond the stripe height and beyond the sides of the sensor, leaving the dielectric layer there-beneath.