The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Feb. 03, 2012
Guo-tsai Huang, Hsinchu County, TW;
Chih-ming KE, Hsinchu, TW;
Guo-Tsai Huang, Hsinchu County, TW;
Chih-Ming Ke, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile