The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Mar. 10, 2014
Shuichi Tsubata, Seoul, KR;
Masatoshi Yoshikawa, Seoul, KR;
Satoshi Seto, Seoul, KR;
Kazuhiro Tomioka, Seoul, KR;
GA Young Ha, Icheon-si, KR;
Shuichi Tsubata, Seoul, KR;
Masatoshi Yoshikawa, Seoul, KR;
Satoshi Seto, Seoul, KR;
Kazuhiro Tomioka, Seoul, KR;
Ga Young Ha, Icheon-si, KR;
Other;
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.