The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

May. 09, 2014
Applicant:

Suvolta, Inc., Los Gatos, CA (US);

Inventors:

Lucian Shifren, San Jose, CA (US);

Scott E. Thompson, Gainesville, FL (US);

Paul E. Gregory, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66659 (2013.01); H01L 21/823412 (2013.01); H01L 21/823456 (2013.01); H01L 29/105 (2013.01); H01L 29/1045 (2013.01); H01L 29/7835 (2013.01); H01L 29/7836 (2013.01);
Abstract

An analog transistor useful for low noise applications or for electrical circuits benefiting from tight control of threshold voltages and electrical characteristics is described. The analog transistor includes a substantially undoped channel positioned under a gate dielectric between a source and a drain with the undoped channel not being subjected to contaminating threshold voltage implants or halo implants. The channel is supported on a screen layer doped to have an average dopant density at least five times as great as the average dopant density of the substantially undoped channel which, in turn, is supported by a doped well having an average dopant density at least twice the average dopant density of the substantially undoped channel.


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