The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9093463 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 28, 2015

Filed:

Nov. 10, 2014
Applicant:

Richtek Technology Corporation, Chupei, Hsinchu, TW;

Inventors:

Chung-Yu Hung, Changhua County, TW;

Jian-Hsing Lee, Chiayi County, TW;

Tzu-Cheng Kao, Hsinchu County, TW;

Tsung-Yi Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66393 (2013.01); H01L 29/737 (2013.01);
Abstract

A silicon controlled rectifier includes: a substrate; a N well and a P well positioned on a side of the substrate and contact with each other; a first N region and a first P region positioned on an upper surface of the N well and contact with each other; a second N region and a second P region positioned on an upper surface of the P well and contact with each other; a first oxide isolation region isolating the first P region and the second N region; a second oxide isolation region isolating the second N region and the second P region; an anode terminal coupled with the first N region and the first P region; and a cathode terminal coupled with the second N region and the second P region. The first P region has a doping concentration less than 80% of that of the second P region.


Find Patent Forward Citations

Hung, Chung-Yu. (2015). Silicon controlled rectifier for providing electrostatic discharge protection for high voltage integrated circuits (U.S. Patent No. 9093463). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9093463

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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