The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Mar. 15, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hsiu-Jung Yen, Shuishang Township, TW;

Jen-Pan Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 27/0629 (2013.01); H01L 28/24 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66583 (2013.01); H01L 29/517 (2013.01);
Abstract

A semiconductor structure comprises a metal gate structure formed in a substrate, wherein the metal gate structure comprises a first film formed of a first material and formed on a bottom and sidewalls of a gate trench, a second film formed of a second material and formed over the first film and a gate electrode formed over the second film. The semiconductor structure further comprises a resistor structure formed in the substrate, where the resistor structure comprises a third film formed of the first material and formed on a bottom and sidewalls of a resistor trench and a fourth film formed of the second material and formed over the third film.


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