The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Mar. 30, 2014
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Xinpeng Wang, Shanghai, CN;
Jing Pan, Shanghai, CN;
Qi Wang, Shanghai, CN;
Xianjie Ning, Shanghai, CN;
Abstract
Semiconductor devices and fabrication methods are provided. A semiconductor substrate includes a first region and a second region. A gate dielectric material layer is formed to cover the first region, and a control gate dielectric layer is formed over a surface portion of the second region. The control gate dielectric layer has a top surface higher than the gate dielectric layer. A gate material layer is conformally formed to cover an entire surface of the semiconductor substrate and has a top surface in the second region higher than a top surface in the first region. A first filling material layer is formed on the gate material layer. A first patterned mask layer is formed on the first filling material layer to form a gate on a gate dielectric layer in the first region. A control gate is formed on the control gate dielectric layer of the second region.