The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Feb. 09, 2012
Ching-hung Kao, Hsinchu County, TW;
Ching-Hung Kao, Hsinchu County, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a buried layer, a deep well having a first conductivity type being disposed on the buried layer, a first doped region having the first conductivity type and a well having the second conductivity type being disposed in the deep well, a first heavily doped region having the first conductivity type being disposed in the first doped region, a second heavily doped region having the first conductivity type being disposed in the well, a gate disposed between the first heavily doped region and the second heavily doped region, and a first trench structure and a second trench structure being disposed at the two sides of the gate in the semiconductor substrate. The first trench structure contacts the buried layer, and a depth of the second trench structure is substantially larger than a depth of the buried layer.