The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Feb. 16, 2014
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C08F 222/40 (2006.01); C08F 24/00 (2006.01); H01B 3/44 (2006.01); H01L 41/187 (2006.01); H01L 41/318 (2013.01); C23C 18/12 (2006.01);
U.S. Cl.
CPC ...
H01B 3/448 (2013.01); C23C 18/1283 (2013.01); H01L 41/1876 (2013.01); H01L 41/318 (2013.01);
Abstract
A method of preparing a ferroelectric thin film-forming composition, specifically, a method of preparing a PZT thin film-forming composition includes: a step of allowing composition precursor raw materials, which contain PZT precursor substances at a concentration of 23 to 38 mass % in terms of oxides in 100 mass % of the composition precursor raw materials, and a high-molecular compound to react with each other to obtain a PZT thin film-forming composition precursor; and a step of aging the PZT thin film-forming composition precursor at a temperature of 0 to 10° C. for at least 30 days.