The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Apr. 09, 2014
Macronix International Co., Ltd., Hsinchu, TW;
Nai-Ping Kuo, Hsinchu, TW;
Su-Chueh Lo, Hsinchu, TW;
Kuen-Long Chang, Taipei, TW;
Chun-Hsiung Hung, Hsinchu, TW;
Chia-Feng Cheng, Changhua, TW;
Ken-Hui Chen, Hsinchu, TW;
Yu-Chen Wang, Kaohsiung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
Techniques are described herein for detecting and recovering over-erased memory cells in a flash memory device. In one embodiment, a flash memory device includes a memory array including a plurality of blocks of memory cells. The device also includes a command interface to receive a command from a source external to the memory device. The device also includes a controller including logic to perform a leakage-suppression process in response to the command. The leakage-suppression process includes performing a soft program operation to increase a threshold voltage of one or more over-erased memory cells in a given block of memory cells and establish an erased state.