The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Dec. 17, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hsi-Wen Chen, Kaohsiung, TW;
Hsin-Pang Lu, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 7/06 (2006.01); G11C 7/12 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/062 (2013.01); G11C 7/12 (2013.01); G11C 7/22 (2013.01);
Abstract
A sense amplifier circuit may be used for read operation of a non-volatile memory. The sense amplifier circuit includes of a first pre-charge circuit, a second pre-charge circuit, a bias circuit, an enable circuit, a current mirror, a first comparator, a second comparator, a buffer and a counter. The current mirror is able to amplify a cell current of a memory cell to prevent error and shorten or maintain access time as erase count of the memory cell increases.