The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Jul. 18, 2013
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Ryoji Asakura, Yokohama, JP;

Kenji Tamaki, Kawasaki, JP;

Akira Kagoshima, Kudamatsu, JP;

Daisuke Shiraishi, Hikari, JP;

Toshio Masuda, Hino, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 1/00 (2006.01); G01J 1/42 (2006.01); G01J 3/443 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
G01J 1/42 (2013.01); G01J 3/443 (2013.01); H01J 37/32935 (2013.01); H01J 37/32963 (2013.01); H01J 37/32972 (2013.01);
Abstract

Among the multiple OES data wavelengths, an analysis device identifies the wavelength of light emissions from a substance contained in the plasma from among multiple light emission wavelengths within the chamber by way of the steps of: measuring the light emission within the chamber during etching processing of the semiconductor wafer; finding the time-based fluctuation due to changes over time on each wavelength in the measured intensity of the light emissions in the chamber; comparing the time-based fluctuations in the wavelength of the light emitted from the pre-specified substance; and by using the comparison results, identifying the wavelength of the light emitted from the substance caused by light emission within the chamber.


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