The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Jun. 25, 2014
Applicant:
Ngk Insulators, Ltd., Aichi-prefecture, JP;
Inventors:
Masahiro Sakai, Nagoya, JP;
Makoto Iwai, Kasugai, JP;
Assignee:
NGK INSULATORS, LTD., Aichi-Prefecture, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B 19/02 (2006.01); C30B 9/12 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 19/02 (2013.01); C30B 9/12 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02573 (2013.01); H01L 21/02625 (2013.01);
Abstract
It is provided a method of producing a crystal of a nitride of a group 13 element in a melt by flux method. The melt is generated by heating a composition including a material for the group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium. Upon producing a crystal of a nitride of a group 13 element in a melt by flux method, it is thereby possible to reduce in-plane distribution of a property such as carrier density of the thus obtained crystal of a nitride of a group 13 element.