The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Apr. 03, 2013
Epistar Corporation, Hsinchu, R.O.C., TW;
Shih-I Chen, Hsinch, TW;
Tsung-Xian Lee, Hsinchu, TW;
Yi-Ming Chen, Hsinchu, TW;
Wei-Yu Chen, Hsinchu, TW;
Ching-Pei Lin, Hsinchu, TW;
Min-Hsun Hsieh, Hsinchu, TW;
Cheng-Nan Han, Hsinchu, TW;
Tien-Yang Wang, Hsinchu, TW;
Hsing-Chao Chen, Hsinchu, TW;
Hsin-Mao Liu, Hsinchu, TW;
Zong-Xi Chen, Hsinchu, TW;
Tzu-Chieh Hsu, Hsinchu, TW;
Chien-Fu Huang, Hsinchu, TW;
Yu-Ren Peng, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.