The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Feb. 04, 2013
Epistar Corporation, Hsinchu, TW;
Min-Hsun Hsieh, Hsinchu, TW;
Chien-Yuan Wang, Hsinchu, TW;
Jin-Ywan Lin, Hsinchu, TW;
Chiu-Lin Yao, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
An optoelectronic element comprises a semiconductor stack layer comprising a first surface and a second surface; a first transparent conductive oxide layer formed on the first surface of the semiconductor stack layer, wherein the first transparent conductive oxide layer comprises at least an opening exposing the first surface of the semiconductor stack layer; and a second transparent conductive oxide layer filled into the opening and covering the first transparent conductive oxide layer; wherein the first transparent conductive oxide layer and the second transparent conductive oxide layer are comprised of a material selected from the group consisting of indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), and zinc oxide (ZnO), and the first transparent conductive oxide layer and the second transparent conductive oxide layer have the same constituent material with different refractive indexes.