The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jun. 06, 2014
Applicant:
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Inventors:
Peter Alexandrov, Piscataway, NJ (US);
Anup Bhalla, Princeton Junction, NJ (US);
Assignee:
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/808 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8083 (2013.01); H01L 29/0619 (2013.01); H01L 29/1066 (2013.01); H01L 29/66909 (2013.01); H01L 2924/13062 (2013.01);
Abstract
A shielded junction field effect transistor (JFET) is described having gate trenches and shield trenches, the shield trenches being deeper and narrower than the gate trenches. The gate trenches may be fully aligned, partially aligned, or separated from the shield trenches.