The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jul. 02, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu-Lien Huang, Jhubei, TW;
Tung Ying Lee, Hsin-Chu, TW;
Chung-Hsien Chen, Taipei, TW;
Chi-Wen Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A device comprises insulation regions disposed in a substrate and a semiconductor fin extending above top surfaces of the insulation regions. The semiconductor fin comprises a first material. A semiconductor region comprising a second material extends from a first side of the semiconductor fin over a top of the fin to a second side of the fin. A strain buffer layer is disposed between, and contacts, the semiconductor fin and the semiconductor region. The strain buffer layer comprises an oxide, and a bottommost surface of the strain buffer layer is vertically spaced apart from the top surfaces of the insulation regions.