The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jun. 28, 2013
Applicants:
Dong-kwon Kim, Yongin-si, KR;
Ki-il Kim, Suwon-si, KR;
Inventors:
Dong-Kwon Kim, Yongin-si, KR;
Ki-Il Kim, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/485 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/76805 (2013.01); H01L 21/76813 (2013.01); H01L 21/76816 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 29/41791 (2013.01); H01L 29/4966 (2013.01); H01L 29/785 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a lower conductor having a lower conductor sidewall, a barrier film having a barrier film sidewall formed directly on the lower conductor sidewall, and a via formed on a top surface of the lower conductor. A top portion of the barrier film sidewall is recessed, such that a top surface of the barrier film sidewall is at a level lower than the top surface of the lower conductor.