The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Oct. 15, 2014
Semiconductor Manufacturing International Corp., Shanghai, CN;
Hualong Song, Shanghai, CN;
SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP., Shanghai, CN;
Abstract
A method is disclosed for fabricating a semiconductor structure. The method includes providing a semiconductor substrate having an oxide layer on a surface of the semiconductor substrate, and removing the oxide layer to expose the surface of the semiconductor substrate. The method also includes performing a thermal annealing process on the semiconductor substrate using an inert gas as a thermal annealing protective gas after removing the oxide layer, and forming an insulating layer on the semiconductor substrate after performing the thermal annealing process. Further, the method includes forming a high-K gate dielectric layer on a surface of the insulating layer, and forming a protective layer on a surface of the high-K gate dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile