The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Oct. 17, 2013
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Haiyang Zhang, Shanghai, CN;
Dongjiang Wang, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 29/0657 (2013.01);
Abstract
Various embodiments provide shallow trenches and fabrication methods. In an exemplary method, a semiconductor substrate can be provided. A mask layer can be provided on the semiconductor substrate. An etch-cleaning process can be performed. The etch-cleaning process can include etching the semiconductor substrate to form a shallow trench by one or more etching steps using the mask layer as an etch mask. The etch-cleaning process can further include performing a plasma cleaning process after each of the one or more etching steps. The plasma cleaning process can use a plasma that is electronegative.