The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Oct. 29, 2013
Applicant:
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Inventor:
Masatoshi Fukuda, Akiruno, JP;
Assignee:
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/28 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28008 (2013.01); H01L 21/308 (2013.01);
Abstract
A hard mask formed above a gate film is patterned with a first mask pattern, the patterned hard mask film is processed into a gate pattern with a second mask pattern, the gate film is patterned with the hard mask film as a mask, a spacer insulating film is formed, a third mask pattern covering an edges of the gate pattern is formed above the spacer insulating film, the spacer insulating film is etched with the third mask pattern as a mask, and a sidewall insulating film is formed on side walls of the gate film leaving the spacer insulating film in a region of the edge of the gate pattern.