The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Dec. 22, 2011
Applicants:
Vishal Sarin, Cupertino, CA (US);
Allahyar Vahidimowlavi, San Jose, CA (US);
Inventors:
Vishal Sarin, Cupertino, CA (US);
Allahyar Vahidimowlavi, San Jose, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3418 (2013.01); G11C 11/5628 (2013.01); G11C 16/10 (2013.01); G11C 16/3427 (2013.01); G11C 2211/562 (2013.01); G11C 2211/5622 (2013.01); G11C 2211/5642 (2013.01); G11C 2211/5648 (2013.01);
Abstract
Programming a memory in two parts to reduce cell disturb is disclosed. In at least one embodiment, data is programmed in two or more sequences of programming pulses with data requiring higher programming voltages programmed first. During each programming sequence, the data which is not being currently selected for programming is inhibited. Overlapping levels and/or voltage ranges can be used.