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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9085685 B1

PDFFull Text
Date of Patent:
Jul. 21, 2015

Filed:

Nov. 27, 2012

Under-fill material and method for producing semiconductor device

Applicant:

Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;

Inventors:

Kosuke Morita, Ibaraki, JP;

Naohide Takamoto, Ibaraki, JP;

Hiroyuki Senzai, Ibaraki, JP;

Assignee:

NITTO DENKO CORPORATION, Ibaraki-shi, JP;

Attorney:

Alleman Hall McCoy Russell & Tuttle LLP

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 21/18 (2006.01); C08L 33/00 (2006.01); H01L 23/18 (2006.01); H01L 21/78 (2006.01); C09D 133/10 (2006.01); C08L 33/10 (2006.01); H01L 23/373 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
C08L 33/00 (2013.01); C08L 33/10 (2013.01); C09D 133/10 (2013.01); H01L 21/563 (2013.01); H01L 21/78 (2013.01); H01L 23/18 (2013.01); H01L 23/3737 (2013.01); C08L 2203/206 (2013.01); H01L 23/293 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29386 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/83191 (2013.01);
Abstract

The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E' [MPa] and a thermal expansion coefficient α [ppm/K] after carrying out a heat-curing treatment at 175° C. for an hour satisfy the following formula (1) at 25° C.:′×α<250000 [Pa/K]  (1).

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