The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Oct. 28, 2014
Applicant:

United Silicon Carbide, Inc., Monmouth Junction, NJ (US);

Inventors:

Xueqing Li, East Brunswick, NJ (US);

Anup Bhalla, Princeton Junction, NJ (US);

Assignee:

United Silicon Carbide, Inc., Monmouth Junction, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/56 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H03K 2017/6875 (2013.01);
Abstract

Disclosed herein are cascode switching circuits that include a normally-on semiconductor device, a normally-off semiconductor device, and a gate driver. The normally-on semiconductor device and said normally-off semiconductor device each has a gate terminal, a drain terminal and a source terminal. The gate driver has a first output and a second output, the first output of said gate driver is coupled to said gate terminal of said normally-on semiconductor device, the second output of said gate driver is coupled to said gate terminal of said normally-off semiconductor device, and the drain terminal of said normally-off semiconductor device is coupled to said source terminal of said normally-on semiconductor device so that a current path is formed through said normally-on semiconductor device and said normally-off semiconductor device. Methods of making and using such circuits, and other various aspects of such circuits are also disclosed.


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